SILICONIX (VISHAY) SI8424CDB-T1-E1

B0731PG8YD

SILICONIX (VISHAY) SI8424CDB-T1-E1 Single N-Channel 8 V 20 mOhm 25 nC Surface Mount Power Mosfet - MICRO FOOT - 3000 item(s)

SILICONIX (VISHAY) SI8424CDB-T1-E1 Single N-Channel 8 V 20 mOhm 25 nC Surface Mount Power Mosfet - MICRO FOOT - 3000 item(s)zoom

Attributes

Key Value
Alternate Part No.78-SI8424CDB-T1-E1
Base Product NumberSI8424
BrandVishay / Siliconix, Vis.
CategoryDiscrete Semiconductor .
Channel ModeChannel Mode
Channel TypeChannel Type
Ciss - Input Capacitance2.34 nF
ConfigurationSingle
Current - Continuous Dr.6.3A (Ta)
Drain to Source Voltage.8 V
Drive Voltage (Max Rds .1.2V, 4.5V
Fall Time40 ns
FET Feature-
FET TypeN-Channel
Forward Transconductanc.30 S
Gate Charge (Qg) (Max) .40 nC @ 4.5 V
Height0.31mm
Id - Continuous Drain C.10 A
Input Capacitance (Ciss.2340 pF @ 4 V
Length1.6mm
ManufacturerVishay
Manufacturer Part No.SI8424CDB-T1-E1
Maximum Continuous Drai.10 A
Maximum Drain Source Re.45 m?
Maximum Drain Source Vo.8 V
Maximum Gate Source Vol.Maximum Gate Source Vol.
Maximum Operating Tempe.+150 ?C, + 150 C
Maximum Power Dissipati.2.7 W
MfrVishay Siliconix
Minimum Gate Threshold .0.35V
Minimum Operating Tempe.- 55 C, -55 ?C
Mounting StyleSMD/SMT
Mounting TypeSurface Mount
Number of Elements per .1
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case4-UFBGA, WLCSP
Package TypeMICRO FOOT
Package/CaseMicro Foot-4 1.6x1.6
PackagingReel
Pd - Power Dissipation2.7 W
Pin CountPin Count
Power Dissipation (Max)1.1W (Ta), 2.7W (Tc)
Product CategoryMOSFET
Product StatusActive
Qg - Gate Charge40 nC
Rds On (Max) @ Id, Vgs20mOhm @ 2A, 4.5V
Rds On - Drain-Source R.20 mOhms
Rise Time40 ns
SeriesTrenchFET?, SI84 Series
StockStock
Supplier Device Package4-Microfoot
TechnologyMOSFET (Metal Oxide)
TradenameMICROFOOT TrenchFET
Transistor ConfigurationSingle
Transistor MaterialTransistor Material
Transistor PolarityN-Channel
Typical Gate Charge @ V.Typical Gate Charge @ V.
Typical Turn-Off Delay .150 ns
Vds - Drain-Source Brea.8 V
Vgs (Max)?5V
Vgs - Gate-Source Break.5 V
Vgs th - Gate-Source Th.800 mV
Vgs(th) (Max) @ Id800mV @ 250?A
Width1.6mm

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18097570.2092519000Vishay/Siliconix0.20925 @ 1
thumbzoomRS Delivers818-14220.22220540Vishay0.222 @ 20
Newark67X68780.2473000404VISHAY0.247 @ 1
us.rs-online.com706170060.42524300404Siliconix / Vishay0.42524 @ 300
Future Electronics30474650.5581540Vishay0.558 @ 1
Digi-Key38777380.781404Vishay Siliconix0.78 @ 1
thumbzoomswatee.comSI8424CDB-T1-E11.22162Vishay1.22 @ 1
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