Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10A (Tc)
DescriptionSuperjunction MOSFET
Detailed DescriptionN-Channel 600 V 10A (Tc.
Digi-Key Part Number5133-ICE10N65FP-ND
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .43 nC @ 10 V
Input Capacitance (Ciss.1250 pF @ 25 V
ManufacturerIceMOS Technology
Manufacturer Product Nu.ICE10N65FP
MfrIceMOS Technology
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack, Iso.
Power Dissipation (Max)35W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs330mOhm @ 5A, 10V
Series-
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.9V @ 250?A
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