Infineon Technologies IRF1312PBF

mpnIRF1312PBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	95A (Tc)
Drain to Source Voltage.	80 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	140 nC @ 10 V
Input Capacitance (Ciss.	5450 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-220-3
Part Status	Obsolete
Power Dissipation (Max)	3.8W (Ta), 210W (Tc)
Rds On (Max) @ Id, Vgs	10mOhm @ 57A, 10V
Series	HEXFET?
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	5.5V @ 250?A

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