Attributes

Key Value
Base Product NumberIXFA110
CategoryDiscrete Semiconductor .
Current - Continuous Dr.110A (Tc)
Drain to Source Voltage.150 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .150 nC @ 10 V
Input Capacitance (Ciss.8600 pF @ 25 V
MfrIXYS
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)480W (Tc)
Rds On (Max) @ Id, Vgs13mOhm @ 55A, 10V
SeriesHiPerFET?, TrenchT2?
Supplier Device PackageTO-263 (D2Pak)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 250?A
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