IXYS IXTP60N10T

B0731N8VCK

IXYS IXTP60N10T Single N-Channel 100 V 18 mOhm 176 W Power Mosfet - TO-220 - 10 item(s)

IXYS IXTP60N10T Single N-Channel 100 V 18 mOhm 176 W Power Mosfet - TO-220 - 10 item(s)zoom

Attributes

Key Value
Base Product NumberIXTP60
CaseTO220AB
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60A (Tc)
Drain current60A
Drain to Source Voltage.100 V
Drain-source voltage100V
Drive Voltage (Max Rds .10V
Features of semiconduct.thrench gate power mosf.
FET Feature-
FET TypeN-Channel
Gate charge49nC
Gate Charge (Qg) (Max) .49 nC @ 10 V
Input Capacitance (Ciss.2650 pF @ 25 V
Kind of channelenhanced
Kind of packagetube
ManufacturerIXYS
MfrIXYS
MountingTHT
Mounting TypeThrough Hole
On-state resistance18m?
Operating Temperature-55?C ~ 175?C (TJ)
Packagetube
Package / CaseTO-220-3
Polarisationunipolar
Power dissipation176W
Power Dissipation (Max)176W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs18mOhm @ 25A, 10V
Reverse recovery time59ns
SeriesTrench
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 50?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomTMEIXTP60N10T1.561267IXYS1.56 @ 10
Digi-Key16525472.648110IXYS2.648 @ 10
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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