Attributes

Key Value
Base Product NumberPH70
CategoryDiscrete Semiconductor .
Current - Continuous Dr.68A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .12 nC @ 5 V
Input Capacitance (Ciss.1362 pF @ 10 V
MfrNXP USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSC-100, SOT-669
Power Dissipation (Max)62.5W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs7.9mOhm @ 10A, 10V
SeriesTrenchMOS?
Supplier Device PackageLFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 1mA
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