Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.5A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .2.5V, 4V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .2.6 nC @ 4.5 V
Input Capacitance (Ciss.200 pF @ 10 V
MfrRenesas
Mounting TypeSurface Mount
Operating Temperature150?C
PackageBulk
Package / Case6-SMD, Flat Leads
Power Dissipation (Max)830mW (Ta)
Product StatusObsolete
Series-
Supplier Device Package6-CMFPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id1.4V @ 1mA
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