Toshiba Semiconductor and Storage TK60E08K3,S1X(S

mpnTK60E08K3,S1X(S
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TK60E08
Category	Discrete Semiconductor .
Current - Continuous Dr.	60A
Drain to Source Voltage.	75 V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	75 nC @ 10 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Through Hole
Operating Temperature	-
Package	Tube
Package / Case	TO-220-3
Part Status	Obsolete
Power Dissipation (Max)	128W
Rds On (Max) @ Id, Vgs	9mOhm @ 30A, 10V
Series	-
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	-

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