Vishay SI7120ADN-T1-GE3

B00B1SDRYQ

Vishay Mosfet,n Channel,diode,60V,9.5A,12128Ppak - SI7120ADN-T1-GE3

Vishay Mosfet,n Channel,diode,60V,9.5A,12128Ppak - SI7120ADN-T1-GE3zoom

Attributes

Key Value
Base Product NumberSI7120
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6A (Ta)
DescriptionMOSFET N-CH 60V 6A PPAK.
Detailed DescriptionN-Channel 60 V 6A (Ta) .
Digi-Key Part NumberSI7120ADN-T1-GE3TR-ND -.
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .45 nC @ 10 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.SI7120ADN-T1-GE3
Manufacturer Standard L.17 Weeks
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? 1212-8
Power Dissipation (Max)1.5W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs21mOhm @ 9.5A, 10V
SeriesTrenchFET?
Supplier Device PackagePowerPAK? 1212-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics30515430.60630006000Vishay0.606 @ 3000
HotendaH18104730.672125Vishay/Siliconix0.672 @ 25
thumbzoomNewark23T85231.4812925VISHAY1.48 @ 25
thumbzoomDigi-Key24417161.784413173Vishay Siliconix1.7844 @ 25
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