Attributes

Key Value
Base Product NumberSUM90
CategoryDiscrete Semiconductor .
Current - Continuous Dr.90A (Tc)
Drain to Source Voltage.100V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .330nC @ 10V
Input Capacitance (Ciss.12000pF @ 50V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusObsolete
Power Dissipation (Max)13.6W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs19mOhm @ 20A, 10V
SeriesTrenchFET?
Supplier Device PackageTO-263 (D2Pak)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 250?A
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