Attributes

Key Value
Base Product NumberIPP120P
CategoryDiscrete Semiconductor .
Current - Continuous Dr.120A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .205 nC @ 10 V
Input Capacitance (Ciss.14790 pF @ 25 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)136W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.8mOhm @ 100A, 10V
SeriesAutomotive, AEC-Q101, O.
Supplier Device PackagePG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 340?A
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