Infineon IPW60R180P7XKSA1

B077BFBX48

INFINEON IPW60R180P7XKSA1 Single N-Channel 600 V 180 mOhm 25 nC CoolMOS Power Mosfet - TO-247-3 - 240 item(s)

INFINEON IPW60R180P7XKSA1 Single N-Channel 600 V 180 mOhm 25 nC CoolMOS Power Mosfet - TO-247-3 - 240 item(s)zoom

Attributes

Key Value
Base Product NumberIPW60R180
CasePG-TO247-3
CategoryDiscrete Semiconductor .
Current - Continuous Dr.18A (Tc)
DescriptionMOSFET N-CH 650V 18A TO.
Detailed DescriptionN-Channel 650 V 18A (Tc.
Digi-Key Part NumberIPW60R180P7XKSA1-ND
Drain current11A
Drain to Source Voltage.650 V
Drain-source voltage600V
Drive Voltage (Max Rds .10V
Features of semiconduct.ESD protected gate
FET Feature-
FET TypeN-Channel
Gate charge25nC
Gate Charge (Qg) (Max) .25 nC @ 10 V
Gate-source voltage?20V
Input Capacitance (Ciss.1081 pF @ 400 V
Kind of channelenhanced
Kind of packagetube
ManufacturerINFINEON TECHNOLOGIES
Manufacturer Product Nu.IPW60R180P7XKSA1
Manufacturer Standard L.39 Weeks
MfrINFINEON TECHNOLOGIES
MountingTHT
Mounting TypeThrough Hole
On-state resistance0.18?
Operating Temperature-55?C ~ 150?C (TJ)
Packagetube
Package / CaseTO-247-3
Polarisationunipolar
Power dissipation72W
Power Dissipation (Max)72W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs180mOhm @ 5.6A, 10V
SeriesCoolMOS? P7
Supplier Device PackagePG-TO247-3
TechnologyMOSFET (Metal Oxide), C.
Type of transistorN-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 280?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomTMEIPW60R180P71.9110INFINEON TECHNOLOGIES1.9 @ 10
thumbzoomNewark34AC17323.71110INFINEON3.71 @ 10
RS Delivers218-30865.502110Infineon5.502 @ 10
thumbzoomDigi-Key68233435.8248110Infineon Technologies5.8248 @ 10
AmazonTPB07NHS4J5M44.01102Infineon Technologies44.0 @ 10
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