Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.14A, 16A
Drain to Source Voltage.25V
FET FeatureLogic Level Gate, 4.5V .
FET Type2 N-Channel (Half Bridg.
Gate Charge (Qg) (Max) .6.2nC @ 4.5V
Input Capacitance (Ciss.810pF @ 10V
MfrRenesas Electronics Ame.
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageBulk
Package / Case8-WDFN Exposed Pad
Part StatusActive
Power - Max8W, 10W
Rds On (Max) @ Id, Vgs9.2mOhm @ 7A, 10V
Series-
Supplier Device Package8-DFN (5x6)
Vgs(th) (Max) @ Id-
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