Rohm Semiconductor RF4E110GNTR

mpnRF4E110GNTR
brandname: Rohm Semiconductor
manufacturername: Rohm Semiconductor

Attributes

Key	Value
Base Product Number	RF4E110
Category	Discrete Semiconductor .
Current - Continuous Dr.	11A (Ta)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	7.4 nC @ 10 V
Input Capacitance (Ciss.	504 pF @ 15 V
Mfr	Rohm Semiconductor
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerUDFN
Part Status	Active
Power Dissipation (Max)	2W (Ta)
Rds On (Max) @ Id, Vgs	11.3mOhm @ 11A, 10V
Series	-
Supplier Device Package	HUML2020L8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 250?A

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