SI4830CDY-T1-GE3-VISHAY

B00DWIH4OW

Siliconix / Vishay SI4830CDY-T1-GE3 MOSFET; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ohm; ID 5.7A; SO-8; PD 1.1W; VGS +/-20V; gFS 1

Siliconix / Vishay SI4830CDY-T1-GE3 MOSFET; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ohm; ID 5.7A; SO-8; PD 1.1W; VGS +/-20V; gFS 1zoom

Attributes

Key Value
Channel TypeN
ConfigurationSingle
Dimensions5 x 4 x 1.55 mm
Drain Current6.5 A
Drain to Source On Resi.0.025 Ohms
Drain to Source Voltage30 V
Forward Transconductance19 S
Forward Voltage, Diode0.75 V
Gate to Source Voltage?20 V
Height0.061" (1.55mm)
Input Capacitance950 pF @ 15 V
Length0.196 in
Maximum Operating Tempe.+150 ?C
Minimum Operating Tempe.-55 ?C
Mounting TypeSurface Mount
Number of Elements per .2
Number of Pins8
Package TypeSO-8
PolarizationDual N-Channel
Power Dissipation1.1 W
Product HeaderDual N-Channel MOSFET w.
SeriesSI48 Series
Temperature Operating R.-55 to +150 ?C
Total Gate Charge7 nC
Turn Off Delay Time19 ns
Turn On Delay Time9 ns
Typical Gate Charge @ V.16.5 nC @ 15 V
Voltage, Breakdown, Dra.30 V
Width0 in

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
us.rs-online.com700261120.7555425002500Siliconix / Vishay0.75554 @ 2500
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