Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.3A (Tc)
DescriptionPOWER FIELD-EFFECT TRAN.
Detailed DescriptionN-Channel 150 V 4.3A (T.
Digi-Key Part Number2156-FQD5N15TM-ND
Drain to Source Voltage.150 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .7 nC @ 10 V
Input Capacitance (Ciss.230 pF @ 25 V
ManufacturerFairchild Semiconductor
Manufacturer Product Nu.FQD5N15TM
MfrFairchild Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)2.5W (Ta), 30W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs800mOhm @ 2.15A, 10V
SeriesQFET?
Supplier Device PackageTO-252, (D-Pak)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id4V @ 250?A
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