Attributes

Key Value
@Ic (test) (A)100m
@VCE (V)10
CaseTO18
Collector Capacitance (.12 pF
Derate Above 25?C33m
Forward Current Transfe.40
Ic Max. (A)1.0
Icbo Max. @Vcb Max. (A)10u
ManufacturerGeneric
Max. hFE40-
Max. Operating Junction.200 ?C
Max. PD (W)6.0
Maximum Collector Curre.1 A
Maximum Collector Power.0.6 W
Maximum Collector-Base .60 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.6 V
Min hFE15
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.N/A
PolarityNPN
R(sat) (?)1.8
SKU136953
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.180M
Transition Frequency (f.50 MHz
TypeTransistor Silicon NPN
Vbr CBO80
Vbr CEO80
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