Attributes

Key Value
Base Product NumberIPB120
CategoryDiscrete Semiconductor .
Current - Continuous Dr.120A (Tc)
DescriptionMOSFET N-CH 100V 120A D.
Detailed DescriptionN-Channel 100 V 120A (T.
Digi-Key Part Number448-IPB120N10S405ATMA1T.
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .91 nC @ 10 V
Input Capacitance (Ciss.6540 pF @ 25 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPB120N10S405ATMA1
Manufacturer Standard L.52 Weeks
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)190W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs5mOhm @ 100A, 10V
SeriesAutomotive, AEC-Q101, O.
Supplier Device PackagePG-TO263-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 120?A
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