Attributes

Key Value
Base Product NumberIXTP60
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60A (Tc)
DescriptionMOSFET N-CH 200V 60A TO.
Detailed DescriptionN-Channel 200 V 60A (Tc.
Digi-Key Part NumberIXTP60N20T-ND
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .73 nC @ 10 V
Input Capacitance (Ciss.4530 pF @ 25 V
ManufacturerIXYS
Manufacturer Product Nu.IXTP60N20T
Manufacturer Standard L.48 Weeks
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)500W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs40mOhm @ 30A, 10V
SeriesTrench
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id5V @ 250?A
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