NXP USA Inc. PHB193NQ06T,118

mpnPHB193NQ06T,118
brandname: NXP USA Inc.
manufacturername: NXP USA Inc.

Attributes

Key	Value
Base Product Number	PHB19
Category	Discrete Semiconductor .
Current - Continuous Dr.	75A (Tc)
Drain to Source Voltage.	55 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	85.6 nC @ 10 V
Input Capacitance (Ciss.	5082 pF @ 25 V
Mfr	NXP USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)	300W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	4mOhm @ 25A, 10V
Series	TrenchMOS?
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 1mA

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