Attributes

Key Value
Base Product NumberFQU11P06
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9.4A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .17 nC @ 10 V
Input Capacitance (Ciss.550 pF @ 25 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, I.
Power Dissipation (Max)2.5W (Ta), 38W (Tc)
Product StatusLast Time Buy
Rds On (Max) @ Id, Vgs185mOhm @ 4.7A, 10V
SeriesQFET?
Supplier Device PackageI-PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
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