mpn
SIHB12N60ET1-GE3
brand
name: Vishay Siliconix
manufacturer
name: Vishay Siliconix
Attributes
Key
Value
Base Product Number
SIHB12
Category
Discrete Semiconductor .
Current - Continuous Dr.
12A (Tc)
Drain to Source Voltage.
600 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
58 nC @ 10 V
Input Capacitance (Ciss.
937 pF @ 100 V
Mfr
Vishay Siliconix
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Bulk
Package / Case
TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)
147W (Tc)
Product Status
Active
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Series
E
Supplier Device Package
D?PAK (TO-263)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?30V
Vgs(th) (Max) @ Id
4V @ 250?A