Vishay Siliconix SIHU6N62E-GE3

mpnSIHU6N62E-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SIHU6
Category	Discrete Semiconductor .
Current - Continuous Dr.	6A (Tc)
Drain to Source Voltage.	620 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	34 nC @ 10 V
Input Capacitance (Ciss.	578 pF @ 100 V
Mfr	Vishay Siliconix
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Cut Tape (CT)
Package / Case	TO-251-3 Short Leads, I.
Part Status	Active
Power Dissipation (Max)	78W (Tc)
Rds On (Max) @ Id, Vgs	900mOhm @ 3A, 10V
Series	-
Supplier Device Package	IPAK (TO-251)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 250?A

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