Diodes Incorporated DMN30H4D0L-13

mpnDMN30H4D0L-13
brandname: Diodes Incorporated
manufacturername: Diodes Incorporated

Attributes

Key	Value
Base Product Number	DMN30
Category	Discrete Semiconductor .
Current - Continuous Dr.	250mA (Ta)
Drain to Source Voltage.	300 V
Drive Voltage (Max Rds .	2.7V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	7.6 nC @ 10 V
Input Capacitance (Ciss.	187.3 pF @ 25 V
Mfr	Diodes Incorporated
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23.
Part Status	Active
Power Dissipation (Max)	310mW (Ta)
Rds On (Max) @ Id, Vgs	4Ohm @ 300mA, 10V
Series	-
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3V @ 250?A

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