Infineon Technologies IRFH5220TRPBF

mpnIRFH5220TRPBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	3.8A (Ta), 20A (Tc)
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	30 nC @ 10 V
Input Capacitance (Ciss.	1380 pF @ 50 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-VQFN Exposed Pad
Part Status	Obsolete
Power Dissipation (Max)	3.6W (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs	99.9mOhm @ 5.8A, 10V
Series	HEXFET?
Supplier Device Package	PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	5V @ 100?A

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