Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.22A
Drain to Source Voltage.1000V (1kV)
FET FeatureStandard
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) .186nC @ 10V
Input Capacitance (Ciss.5200pF @ 25V
MfrMicrosemi Corporation
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP3
Part StatusObsolete
Power - Max390W
Rds On (Max) @ Id, Vgs420mOhm @ 11A, 10V
SeriesPOWER MOS 7?
Supplier Device PackageSP3
Vgs(th) (Max) @ Id5V @ 2.5mA
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