Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5A (Ta)
Drain to Source Voltage.30 V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .21.8 nC @ 10 V
Input Capacitance (Ciss.1115 pF @ 10 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageBulk
Package / CaseSC-96
Power Dissipation (Max)1.2W (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs45mOhm @ 2.5A, 10V
Series-
Supplier Device Package3-CPH
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id-
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