Attributes

Key Value
Base Product NumberTK14N65
CategoryDiscrete Semiconductor .
Current - Continuous Dr.13.7A (Ta)
DescriptionMOSFET N-CH 650V 13.7A .
Detailed DescriptionN-Channel 650 V 13.7A (.
Digi-Key Part NumberTK14N65W5S1F-ND
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .40 nC @ 10 V
Input Capacitance (Ciss.1300 pF @ 300 V
ManufacturerToshiba Semiconductor a.
Manufacturer Product Nu.TK14N65W5,S1F
Manufacturer Standard L.52 Weeks
MfrToshiba Semiconductor a.
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)130W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs300mOhm @ 6.9A, 10V
SeriesDTMOSIV
Supplier Device PackageTO-247
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 690?A
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