Attributes

Key Value
@Ic (A)150m
@VCE (test) (V)10
C(ob) (F)8p
CaseTO122
Collector Capacitance (.8 pF
Derate (Amb) (W/?C)1.2m
Forward Current Transfe.30
hfe30
Icbo Max. @Vcb Max. (A).50u
ManufacturerTIIB
Max. Operating Junction.200 ?C
Max. PD (W)150m
Maximum Collector Curre.0.8 A
Maximum Collector Power.0.15 W
Maximum Collector-Base .60 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.4-27
PolarityNPN
SKU1280710
Surface Mounted Yes/NoNO
t(f) Max. (S)60n+
Tr Max. (s)40n
Trans. Freq (Hz) Min.250M
Transition Frequency (f.250 MHz
TypeTransistor Silicon NPN
Vbr CBO60
Vbr CEO30
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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