Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.17A (Tc)
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .41 nC @ 10 V
Input Capacitance (Ciss.910 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusObsolete
Power Dissipation (Max)3W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs165mOhm @ 10A, 10V
SeriesHEXFET?
Supplier Device PackageD-Pak
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5.5V @ 250?A
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