Attributes

Key Value
Base Product NumberSTW30N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.25A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .91 nC @ 10 V
Input Capacitance (Ciss.2700 pF @ 50 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)190W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs130mOhm @ 12.5A, 10V
SeriesMDmesh? II
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759924413.1433