mpn
SIHA21N65EF-GE3
brand
name: Vishay Siliconix
manufacturer
name: Vishay Siliconix
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
21A (Tc)
Drain to Source Voltage.
650 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
106 nC @ 10 V
Input Capacitance (Ciss.
2322 pF @ 100 V
Mfr
Vishay Siliconix
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-220-3 Full Pack
Power Dissipation (Max)
35W (Tc)
Product Status
Active
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Series
-
Supplier Device Package
TO-220 Full Pack
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?30V
Vgs(th) (Max) @ Id
4V @ 250?A