Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5.4A (Ta)
Drain to Source Voltage.60V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .24.2nC @ 10V
Input Capacitance (Ciss.1021pF @ 30V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)2.11W (Ta)
Rds On (Max) @ Id, Vgs85mOhm @ 2.9A, 10V
Series-
Supplier Device PackageTO-252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id1V @ 250?A
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