mpn
2N7635-GA
brand
name: GeneSiC Semiconductor
manufacturer
name: GeneSiC Semiconductor
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
4A (Tc) (165?C)
Drain to Source Voltage.
650 V
Drive Voltage (Max Rds .
-
FET Feature
-
FET Type
-
Input Capacitance (Ciss.
324 pF @ 35 V
Mfr
GeneSiC Semiconductor
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 225?C (TJ)
Package
Bulk
Package / Case
TO-257-3
Part Status
Obsolete
Power Dissipation (Max)
47W (Tc)
Rds On (Max) @ Id, Vgs
415mOhm @ 4A
Series
-
Supplier Device Package
TO-257
Technology
SiC (Silicon Carbide Ju.
Vgs (Max)
-
Vgs(th) (Max) @ Id
-