Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4A (Tc) (165?C)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .-
FET Feature-
FET Type-
Input Capacitance (Ciss.324 pF @ 35 V
MfrGeneSiC Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 225?C (TJ)
PackageBulk
Package / CaseTO-257-3
Part StatusObsolete
Power Dissipation (Max)47W (Tc)
Rds On (Max) @ Id, Vgs415mOhm @ 4A
Series-
Supplier Device PackageTO-257
TechnologySiC (Silicon Carbide Ju.
Vgs (Max)-
Vgs(th) (Max) @ Id-
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