IXYS IXTT3N200P3HV

mpnIXTT3N200P3HV
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Base Product Number	IXTT3
Category	Discrete Semiconductor .
Current - Continuous Dr.	3A (Tc)
Drain to Source Voltage.	2000 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	70 nC @ 10 V
Input Capacitance (Ciss.	1860 pF @ 25 V
Mfr	IXYS
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-268-3, D?Pak (2 Lead.
Part Status	Active
Power Dissipation (Max)	520W (Tc)
Rds On (Max) @ Id, Vgs	8Ohm @ 1.5A, 10V
Series	Polar P3?
Supplier Device Package	TO-268HV (IXTT)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	5V @ 250?A

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