Attributes

Key Value
Base Product NumberIXTX17
CategoryDiscrete Semiconductor .
Current - Continuous Dr.17A (Tc)
Drain to Source Voltage.1200 V
Drive Voltage (Max Rds .20V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .155 nC @ 15 V
Input Capacitance (Ciss.8300 pF @ 25 V
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3 Variant
Power Dissipation (Max)700W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs900mOhm @ 8.5A, 20V
SeriesLinear
Supplier Device PackagePLUS247?-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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