Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.147A (Tc)
Drain to Source Voltage.1200V (1.2kV)
FET FeatureSilicon Carbide (SiC)
FET Type6 N-Channel (3-Phase Br.
Gate Charge (Qg) (Max) .322nC @ 20V
Input Capacitance (Ciss.5600pF @ 1000V
MfrMicrochip Technology
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP6
Part StatusActive
Power - Max625W
Rds On (Max) @ Id, Vgs17mOhm @ 100A, 20V
Series-
Supplier Device PackageSP6-P
Vgs(th) (Max) @ Id2.4V @ 20mA (Typ)
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