Nexperia USA Inc. PSMN1R2-25YLDX

mpnPSMN1R2-25YLDX
brandname: Nexperia USA Inc.
manufacturername: Nexperia USA Inc.

Attributes

Key	Value
Base Product Number	PSMN1R2
Category	Discrete Semiconductor .
Current - Continuous Dr.	100A (Tc)
Drain to Source Voltage.	25 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) .	60.3 nC @ 10 V
Input Capacitance (Ciss.	4327 pF @ 12 V
Mfr	Nexperia USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	172W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	1.2mOhm @ 25A, 10V
Series	-
Supplier Device Package	LFPAK56, Power-SO8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.2V @ 1mA

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