Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5V, 10V
Drain to Source Voltage.30nC @ 5V
Drive Voltage (Max Rds .8mOhm @ 25A, 10V
FET Feature105.3W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .2.866pF @ 25V
MfrRochester Electronics, .
Mounting TypeLFPAK56, Power-SO8
Operating TemperatureSurface Mount
PackageActive
Package / Case40V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 175?C (TJ)
Rds On (Max) @ Id, Vgs2.15V @ 1mA
SeriesBulk
Supplier Device PackageSC-100, SOT-669
Technology75A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?15V
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