B09D3Z8K4Y

K4H561638N-LCCC - Memory 28-Pins TSSOP 4H561638 (10 Piece Lot)

Attributes

Key Value
Access Time-Max 650 ps
Clock Frequency-Max (fC. 200 MHz
Direct Alternates K4H561638N-LCCC0 K4H5.
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e6
Manufacturer Samsung Semiconductor
Manufacturer Part Number K4H561638N-LCCC
Memory Density 268.4355 Mbit
Memory IC Type DDR DRAM
Memory Width 16
Moisture Sensitivity Le. 3
Number of Terminals 66
Number of Words 16.7772 M
Number of Words Code 16000000
Operating Temperature-M. 70 ?C
Operating Temperature-M. 0 ?C
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Win SourceK4H561638N-LCCC2.795203186Samsung2.795 @ 20
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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