- mpnSIRA00DP-T1-GE3
- brandname: Siliconix / Vishay
- manufacturername: Siliconix / Vishay
SILICONIX (VISHAY) SIRA00DP-T1-GE3 Discretes mosfets Single N-Channel 30 V 4 mOhm SMT TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8-10 Item(s)
- Brand: SILICONIX (VISHAY)
- PartNumber: SIRA00DP-T1-GE3
- Model: SIRA00DP-T1-GE3
- PackageQuantity: 1
- Manufacturer: SILICONIX (VISHAY)
- Label: SILICONIX (VISHAY)
Attributes
| Key | Value |
|---|
| Base Product Number | SIRA00 |
| Case | PowerPAK? SO8 |
| Category | Discrete Semiconductor . |
| Channel Type | N |
| Configuration | Quad Drain ; Triple Sou. |
| Current - Continuous Dr. | 100A (Tc) |
| Dimensions | 5.99 x 5 x 1.07 mm |
| Drain Current | 100 A |
| Drain current | 100A |
| Drain to Source On Resi. | 0.0014 Ohms |
| Drain to Source Voltage | 30 V |
| Drain to Source Voltage. | 30 V |
| Drain-source voltage | 30V |
| Drive Voltage (Max Rds . | 4.5V, 10V |
| Fall Time | 22 ns |
| FET Feature | - |
| FET Type | N-Channel |
| Forward Transconductance | 140 S |
| Forward Voltage, Diode | 1.1 V |
| Gate charge | 0.22?C |
| Gate Charge (Qg) (Max) . | 220 nC @ 10 V |
| Gate to Source Voltage | -16, 20 V |
| Gate-source voltage | -16...20V |
| Height | 0.042" (1.07mm) |
| Input Capacitance | 11700 pF @ 15 V |
| Input Capacitance (Ciss. | 11700 pF @ 15 V |
| Junction to Ambient The. | 20 ?C/W |
| Kind of channel | enhanced |
| Kind of package | reel, |
| Length | 0.235 in |
| Manufacturer | VISHAY |
| Maximum Operating Tempe. | +150 ?C |
| Mfr | Vishay Siliconix |
| Minimum Operating Tempe. | -55 ?C |
| Mounting | SMD |
| Mounting Type | Surface Mount |
| Number of Elements per . | 1 |
| Number of Pins | 8 |
| On-state resistance | 1.35m? |
| Operating and Storage T. | -55 to 150 C |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | PowerPAK? SO-8 |
| Package Type | PowerPAK-SO-8 |
| Polarisation | unipolar |
| Polarization | N-Channel |
| Power dissipation | 66.6W |
| Power Dissipation | 104 W |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Product Status | Active |
| Pulsed drain current | 400A |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 20A, 10V |
| Resistance, Thermal, Ju. | 1.2 ?C/W |
| Series | TrenchFET?, TrenchFET S. |
| Supplier Device Package | PowerPAK? SO-8 |
| Technology | TrenchFET?, MOSFET (Met. |
| Temperature Operating R. | -55 to +150 ?C |
| Total Gate Charge | 66 nC |
| Turn Off Delay Time | 67 ns |
| Turn On Delay Time | 43 ns |
| Type of transistor | N-MOSFET |
| Typical Gate Charge @ V. | 147 nC @ 10 V |
| Vgs (Max) | +20V, -16V |
| Vgs(th) (Max) @ Id | 2.2V @ 250?A |
| Voltage, Breakdown, Dra. | 30 V |
| Width | 0 in |
All Prices
| Img | Seller | Supplier SKU | Min Price | MOQ | In Stock | Lead Time | Brand | Weight | Preferred Tier |
|---|
| Hotenda | H1807298 | 0.95067 | 1 | 3000 | | Vishay/Siliconix | | 0.95067 @ 100 |
| us.rs-online.com | 70243882 | 1.15 | 3000 | 100 | | Siliconix / Vishay | | 1.15 @ 3000 |
| Future Electronics | 7021479 | 1.296 | 3000 | 100 | | Vishay | | 1.296 @ 3000 |
 | Newark | 05W5775 | 1.45 | 1 | 2914 | | VISHAY | | 1.45 @ 100 |
| TME | SIRA00DP-T1-GE3 | 1.67 | 1 | 100 | | VISHAY | | 1.67 @ 100 |
| Digi-Key | 3178388 | 1.897385 | 1 | 100 | | Vishay Siliconix | | 1.897385 @ 100 |
| RS Delivers | 787-9367P | 2.838 | 1 | 320 | | Vishay | | 2.838 @ 100 |