Attributes

Key Value
Base Product NumberSI5509
CategoryDiscrete Semiconductor .
ConfigurationN and P-Channel
Current - Continuous Dr.6.1A, 4.8A
DescriptionMOSFET N/P-CH 20V 6.1A .
Detailed DescriptionMosfet Array 20V 6.1A, .
Digi-Key Part NumberSI5509DC-T1-GE3-ND - Ta.
Drain to Source Voltage.20V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) .6.6nC @ 5V
Input Capacitance (Ciss.455pF @ 10V
ManufacturerVishay Siliconix
Manufacturer Product Nu.SI5509DC-T1-GE3
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Power - Max4.5W
Product StatusObsolete
Rds On (Max) @ Id, Vgs52mOhm @ 5A, 4.5V
SeriesTrenchFET?
Supplier Device Package1206-8 ChipFET?
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250?A
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