Infineon Technologies BSC886N03LSGATMA1

mpnBSC886N03LSGATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	BSC886
Category	Discrete Semiconductor .
Current - Continuous Dr.	13A (Ta), 65A (Tc)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	26 nC @ 10 V
Input Capacitance (Ciss.	2100 pF @ 15 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5W (Ta), 39W (Tc)
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	6mOhm @ 30A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TDSON-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.2V @ 250?A

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