Infineon Technologies SP001385054

mpnSP001385054
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	19A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	34 nC @ 10 V
Input Capacitance (Ciss.	1500 pF @ 400 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Bulk
Package / Case	TO-220-3
Power Dissipation (Max)	92W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	120mOhm @ 7.8A, 10V
Series	CoolMOS?
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 390?A

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