Infineon Technologies SPP02N60C3XKSA1

mpnSPP02N60C3XKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	1.8A (Tc)
Drain to Source Voltage.	600V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	12.5nC @ 10V
Input Capacitance (Ciss.	200pF @ 25V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-220-3
Part Status	Obsolete
Power Dissipation (Max)	25W (Tc)
Rds On (Max) @ Id, Vgs	3Ohm @ 1.1A, 10V
Series	CoolMOS?
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.9V @ 80?A

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