Attributes

Key Value
Base Product NumberAPTM60
CategoryDiscrete Semiconductor .
Current - Continuous Dr.40A
Drain to Source Voltage.600V
FET FeatureStandard
FET Type2 N-Channel (Half Bridg.
Gate Charge (Qg) (Max) .330nC @ 10V
Input Capacitance (Ciss.10552pF @ 25V
MfrMicrochip Technology
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP1
Part StatusActive
Power - Max390W
Rds On (Max) @ Id, Vgs132mOhm @ 33A, 10V
Series-
Supplier Device PackageSP1
Vgs(th) (Max) @ Id5V @ 2.5mA
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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