STMicroelectronics STB10N65K3

mpnSTB10N65K3
brandname: STMicroelectronics
manufacturername: STMicroelectronics

Attributes

Key	Value
Base Product Number	STB10N6
Category	Discrete Semiconductor .
Current - Continuous Dr.	10A (Tc)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	42 nC @ 10 V
Input Capacitance (Ciss.	1180 pF @ 25 V
Mfr	STMicroelectronics
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-3, D?Pak (2 Lead.
Part Status	Obsolete
Power Dissipation (Max)	150W (Tc)
Rds On (Max) @ Id, Vgs	1Ohm @ 3.6A, 10V
Series	SuperMESH3?
Supplier Device Package	D?PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4.5V @ 100?A

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