Vishay Siliconix SIJ128LDP-T1-GE3

mpnSIJ128LDP-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	10.2A (Ta), 25.5A (Tc)
Drain to Source Voltage.	80V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	30nC @ 10V
Input Capacitance (Ciss.	1250pF @ 40V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	PowerPAK? SO-8
Part Status	Active
Power Dissipation (Max)	3.6W (Ta), 22.3W (Tc)
Rds On (Max) @ Id, Vgs	15.6mOhm @ 10A, 10V
Series	TrenchFET?
Supplier Device Package	PowerPAK? SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 250?A

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