Attributes

Key Value
@Ic (A)10m
@VCE (test) (V)10
C(ob) (F)12p
CaseTO122
Collector Capacitance (.12 pF
Derate (Amb) (W/?C)1.0m
Forward Current Transfe.30
hfe30
Ic Max. (A)800m
Icbo Max. @Vcb Max. (A).05u
ManufacturerTIIB
Max. Operating Junction.175 ?C
Max. PD (W)150m
Maximum Collector Curre.0.8 A
Maximum Collector Power.0.15 W
Maximum Collector-Base .50 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.4-27
PolarityNPN
SKU1280624
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.200M
Transition Frequency (f.200 MHz
TypeTransistor Silicon NPN
Vbr CBO50
Vbr CEO30
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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