Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.2A (Ta)
Drain to Source Voltage.250V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .38nC @ 10V
Input Capacitance (Ciss.930pF @ 25V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm.
Part StatusObsolete
Power Dissipation (Max)2.5W (Ta)
Rds On (Max) @ Id, Vgs230mOhm @ 1.3A, 10V
SeriesHEXFET?
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5.5V @ 250?A
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